npn rf amplifier PN3563 absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted this device is designed for use as rf amplifiers, oscillators and multipliers with collector currents in the 1.0 ma to 30 ma range. sourced from process 43. see pn918 for characteristics. symbol parameter value units v ceo collector-emitter voltage 15 v v cbo collector-bas e voltage 30 v v ebo emitter-base voltage 2.0 v i c collector current - continuous 50 ma t j , t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units PN3563 p d total device dissipation derate above 25 c 350 2.8 mw mw/ c r q jc thermal resistanc e, j unction to case 125 c/w r q ja thermal resistanc e, j unction to ambient 357 c/w c b e to-92 PN3563 discrete power & signal technologies ? 1997 fairchild semiconductor corporation
PN3563 npn rf amplifier (continued) electrical characteristics ta= 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v ceo( sus ) collector-emitter sustaining voltage* i c = 3.0 ma, i b = 0 15 v v (br)cbo collector-bas e breakdown voltage i c = 100 m a, i e = 0 30 v v (br) ebo emitter-base breakdown voltage i e = 10 m a, i c = 0 2.0 v i cbo collector cutoff current v cb = 15 v, i e = 0 v cb = 15 v, t a = 150 c 0.05 5.0 m a na on characteristics* h fe dc current gain i c = 8.0 ma, v ce = 10 v 20 200 small signal characteristics f t current gain - bandwidth product i c = 8.0 ma, v ce = 10 v, f = 100 mhz 600 1500 mhz c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz v cb = 0, i e = 0, f = 1.0 mhz 1.7 3.0 pf pf c ibo input capac itance v be = 0.5 v, i c = 0, f = 140 mhz 2.0 pf h fe small-signal current gain i c = 8.0 ma, v ce = 10 v, f = 1.0 khz 20 250 rbc c collector base time constant i c = 8.0 ma, v ce = 10 v, f = 79.8 mhz 8.0 25 ps functional test g pe amplifier power gain i c = 8.0 ma, v cb = 10 v, f = 200 mhz 14 26 db * pulse test: pulse width 300 m s, duty cycle 2.0%
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